In this paper, we study the impact of temperature on various performance parameters of n-type dopingless Silicon on Insulator transistor (DL-SOI). On-off current ratio (Ion/Ioff) decreases with increase in temperature. Simulation study shows that subthreshold swing (SS), drain induced barrier lowering (DIBL) and trans-conductanceare degraded with increasing temperature. A comparative study is also performed between junctionless SOI transistor (JL-SOI) and DL-SOI with respect to temperature. Performance parameters such as SS, DIBL, Ion/Ioff are degraded in both the devices with increases temperature, but DL-SOI shows better performance in terms of performance parameter than JL-SOI with increasing temperature.DL-SOI also shows lower self-heating in comparison to JL-SOI device with drain voltage.