National Journal of Multidisciplinary Research and Development

National Journal of Multidisciplinary Research and Development


National Journal of Multidisciplinary Research and Development
National Journal of Multidisciplinary Research and Development
Vol. 4, Issue 4 (2019)

Temperature variation on dopingless SOI


Amit Kumar Singh

In this paper, we study the impact of temperature on various performance parameters of n-type dopingless Silicon on Insulator transistor (DL-SOI). On-off current ratio (Ion/Ioff) decreases with increase in temperature. Simulation study shows that subthreshold swing (SS), drain induced barrier lowering (DIBL) and trans-conductanceare degraded with increasing temperature. A comparative study is also performed between junctionless SOI transistor (JL-SOI) and DL-SOI with respect to temperature. Performance parameters such as SS, DIBL, Ion/Ioff are degraded in both the devices with increases temperature, but DL-SOI shows better performance in terms of performance parameter than JL-SOI with increasing temperature.DL-SOI also shows lower self-heating in comparison to JL-SOI device with drain voltage.
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